As they are the application of conventional silicon wafers, ThickBOX® SOI Wafers and Structured SOI Wafers offered by KST World are an excellent means of creating super-high-voltage power devices that can use traditional design concepts and fabrication facilities.

ThickBOX® SOI

Power Devices IGBT

Direct Bond Cavity SOI

In the case of a hybrid type IGBT, Direct Bond Cavity SOI with an air layer is effective. The air layer acts as an insulation layer and the area free from the air layer is used as a conventional silicon substrate, easily solving the problems of high voltage and radiation.