Process service

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Specifications

Sizes

4 inches to 12 inches

Film types

Diffusion furnace/CVD	Thermal oxide films(THOX®), TEOS films, nitride films, poly-Si films, α-Si films, BPSG, and W-CVD
Metal films	Al, Al-Si, Al-Cu, Al-Si-Cu, Ti, TiN, Ta, TaN, W, Cu, Cu plating, Au, etc.
Coating films	Resist, polyimide (photosensitive, and nonphotosensitive), and SOG
Other process service	Ion implantation, photolithography, etching, silicon wafer downsizing, grinding, polishing, and laser marking
Patterned wafers	Contact holes, and TEG-patterned wafers for assessment

* Some wafers can not be processed depending on their sizes. For more information, please contact us.

Film type	Thickness	4	5	6	8	12
Thermal oxide films (THOX®)	20 nm―2.5 µm	●	●	●	●	●
Super thin thermal oxide films (THOX®)	Up to 20 µm	●	●	●	●	●
PE-CVD TEOS	100nm―1.5 µm		●	●	●	●
LP-CVD	50 nm―300 nm	●	●	●	●	●
PE-CVD	100 nm―1.2 µm	●	●	●	●	●
BPSG/PSG			●	●	●	●
Poly-Si (Non-Dope)	50 nm―500 nm	●	●	●	●	●
AP-CVD oxide	100 nm―800 nm		●	●	●	●
EPI	1 µm―20 µm	●	●
Al	100 nm―500 nm	●
Al-Si	100 nm―500 nm	●	●	●
Al-Si-Cu	100 nm―500 nm		●	●
Al-Cu	100 nm―500 nm				●	●
Ti	100 nm―500 nm	●	●	●	●	●
TiN	100 nm―500 nm	●	●	●	●	●
Ta	100 nm―500 nm			●	●
TaN	100 nm―500 nm				●
W-Si (CVD)	100 nm―500 nm		●	●	●	●
Cu	100 nm―500 nm				●	●
Au				●
Resist	100 nm―3 µm	●	●	●	●	●
Pattern processing				●	●
Ion implantation		●	●	●	●	●
Polyimide			●	●	●
Wafer reclaim		●	●	●	●	●
SOG			●	●	●